A global analysis workforce led by NYU Tandon College of Engineering and KAIST has developed a novel strategy for figuring out and characterizing atomic-scale defects in hBN, a 2D materials referred to as “white graphene” as a result of its distinctive properties. The examine was revealed in ACS Nano.
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This improvement might speed up the creation of quantum applied sciences and next-generation electronics.
In line with the workforce, they recognized when boron atoms in hexagonal boron nitride (hBN) crystals have been being changed by particular person carbon atoms. Listening to the digital “noise” in specifically made transistors—just like listening to a whisper in a quiet room—made this discovery attainable.
The examine was chosen as the duvet story for the October 22, 2024, challenge of ACS Nano.
On this challenge, we primarily created a stethoscope for 2D supplies. By analyzing the tiny and rhythmic fluctuations in electrical present, we will ‘understand’ the conduct of single atomic defects.
Davood Shahrjerdi, Examine Corresponding Writer and Affiliate Professor, Tandon’s Electrical and Pc Engineering Division, New York College
Shahrjerdi is a school member at NYU WIRELESS and the director of the NYU Nanofabrication Cleanroom (NanoFab), which opened final 12 months. Kim is a professor {of electrical} engineering on the Korea Superior Institute of Science and Know-how (KAIST).
Shahrjerdi and Kim additionally oversee collaborations within the NYU-KAIST Subsequent-Gen Semiconductor Gadgets and Chips analysis group as they’re affiliated college on the NYU-KAIST World Innovation and Analysis Institute.
The President of South Korea formally launched the NYU-KAIST partnership at NYU in September 2022. This historic collaboration, which at the moment contains over 200 college members from each establishments, brings collectively the distinctive strengths of each universities to drive advances in analysis and schooling.
In scientific circles, single-crystal hBN has emerged as a surprise materials with the potential to remodel fields starting from unconventional electronics to quantum expertise.
As a consequence of its distinctive insulating qualities and atomically skinny construction, hBN is an ideal medium for exhibiting uncommon bodily phenomena that aren’t achievable with conventional supplies. hBN’s atomic defects can weaken its digital traits, generally in ways in which may very well be used to develop quantum applied sciences.
The NYU workforce used layers of hBN sandwiched between a few-layer skinny molybdenum disulfide, one other 2D semiconducting materials, to create a transistor. They noticed distinct jumps within the present passing by way of the transistor by making use of exact electrical voltages and cooling this gadget to cryogenic temperatures.
These jumps, referred to as random telegraph indicators, occur when hBN defects catch and launch electrons. By carefully inspecting these indicators at numerous voltages and temperatures, the workforce recognized the defects’ power ranges and spatial places.
It’s like now we have developed a microscope that may ‘see’ particular person atoms, however as a substitute of sunshine, we’re utilizing electrical energy.
Zhujun Huang, Examine First Writer and Nanofab PostDoctoral Researcher, Tandon’s Electrical and Pc Engineering Division, New York College
The workforce went on to make clear the atomistic origins of the experimental observations utilizing refined pc simulations. The mix of principle and experiment confirmed that the defects within the hBN crystal construction are carbon atoms occupying positions that boron atoms ought to occupy.
Sharhrjerdi and Kim added, “Understanding and controlling the defects in 2D supplies might have vital implications for the way forward for electronics and quantum applied sciences. For instance, we’d be capable of create extra excellent quantum materials platforms for the invention of latest physics or single-photon emitters for safe communications.”
The CHIPS and Science Act’s aims for semiconductor innovation are according to this examine, which broadens NYU Tandon’s rising portfolio in quantum supplies and gadget applied sciences. Earlier research confirmed the potential of low-disorder quantum supplies in units mixed with superconductors.
The NYU Nanofab prototyping facility, situated within the Northeast Regional Protection Know-how Hub and certainly one of eight U.S. Microelectronics Commons hubs, advances the sector. The Nanofab serves the NYU and regional analysis communities and focuses on integrating quantum supplies and units.
Ryong-Gyu Lee, Jiyoon Track, and Jeongwon Lee, from the College of Electrical Engineering at KAIST; Edoardo Cuniberto and Abdullah Alharbi, each Ph.D. alumni at NYU Tandon’s ECE Division; Kim Kisslinger from the Middle for Useful Nanomaterials at Brookhaven Nationwide Laboratory; Takashi Taniguchi from the Analysis Middle for Supplies Nanoarchitectonics on the Nationwide Institute for Supplies Science in Tsukuba, Japan; and Kenji Watanabe from the Analysis Middle for Digital and Optical Supplies, additionally on the Nationwide Institute for Supplies Science in Tsukuba, Japan are the opposite examine authors.
The examine was funded in the USA by the US Division of Power’s Middle for Useful Nanomaterials at Brookhaven Nationwide Laboratory and the Nationwide Science Basis.
Contributions from South Korea included computational assets from the KISTI Supercomputing Middle, the BK21 Plus program at KAIST, and a number of other grants from the Nationwide Analysis Basis of Korea. The World Premier Worldwide Analysis Middle Initiative of MEXT and the Japan Society for the Promotion of Science KAKENHI supplied Japanese assist.
Journal Reference:
Huang, Z. et. al. (2024) Characterizing Defects Inside Hexagonal Boron Nitride Utilizing Random Telegraph Indicators in van der Waals 2D Transistors. ACS Nano. doi.org/10.1021/acsnano.4c06929
